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| STP22NF03L N-CHANNEL 30V - 0.038 - 22A TO-220 STripFETTM POWER MOSFET TYPE STP22NF03L s s s s VDSS 30V RDS(on) <0.05 ID 22A TYPICAL RDS(on) = 0.038 EXCEPTIONAL dv/dt CAPABILITY LOW GATE CHARGE AT 100C APPLICATION ORIENTED CHARACTERIZATION 3 1 2 DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique "Single Feature SizeTM" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. TO-220 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS DC-DC & DC-AC CONVERTERS s MOTOR CONTROL, AUDIO AMPLIFIERS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s AUTOMOTIVE ENVIRONMENT s ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt (1) EAS (2) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuos) at TC = 25C Drain Current (continuos) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 30 30 15 22 16 88 45 0.3 6 200 -65 to 175 175 (1) I SD 10A, di/dt 300A/s, VDD V (BR)DSS, Tj T JMAX. (2) Starting T j=25C, ID=11A, V DD=15V Unit V V V A A A W W/C V/ns mJ C C (q) Pulse width limited by safe operating area Aug 2000 1/8 STP22NF03L THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 3.33 62.5 300 C/W C/W C ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 C VGS = 20V Min. 30 1 10 100 Typ. Max. Unit V A A nA ON (1) Symbol VGS(th) RDS(on) ID(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance On State Drain Current Test Conditions VDS = VGS, ID = 250A VGS = 10V, ID = 11 A VGS = 5 V, ID = 11 A VDS > ID(on) x RDS(on)max, VGS = 10V 22 Min. 1 0.038 0.045 0.05 0.06 A Typ. Max. Unit V DYNAMIC Symbol gfs (1) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25V, f = 1 MHz, VGS = 0 Test Conditions VDS > ID(on) x RDS(on)max, ID =11A Min. Typ. 7 330 90 40 Max. Unit S pF pF pF 2/8 STP22NF03L ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 15V, ID = 11A RG = 4.7 VGS = 4.5V (see test circuit, Figure 3) VDD = 24V, ID = 22A, VGS = 10V Min. Typ. 11 100 6.5 3.6 2 9 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol td(off) tf tr(off) tf tc Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM Parameter Turn-off-Delay Time Fall Time Off-voltage Rise Time Fall Time Cross-over Time Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 22A, VGS = 0 ISD = 22A, di/dt = 100A/s, VDD = 15V, Tj = 150C (see test circuit, Figure 5) 30 18 1.2 Test Conditions Min. Vclamp =24V, ID =22A RG = 4.7, VGS = 4.5V (see test circuit, Figure 5) Test Conditions VDD = 15V, ID = 11A, RG = 4.7, VGS = 4.5V (see test circuit, Figure 3) Min. Typ. 25 22 22 55 75 Typ. Max. 22 88 1.5 Max. Unit ns ns ns ns ns Unit A A V ns nC A SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Safe Operating Area Thermal Impedence 3/8 STP22NF03L Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 STP22NF03L Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/8 STP22NF03L Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 STP22NF03L TO-220 MECHANICAL DATA DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107 A C D1 L2 D F1 G1 E Dia. L5 L7 L6 L4 P011C L9 F2 F G H2 7/8 STP22NF03L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2000 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 8/8 |
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